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residual stress warping

Differential RF MEMS interwoven capacitor immune to residual stress warping

1 min read · Fri, Apr 27 2012

News

Differential RF Circuits MEMS interwoven capacitor immune residual stress warping

Amro M. Elshurafa, , et al., "Differential RF MEMS interwoven capacitor immune to residual stress warping." Micro & Nano Letters 7 (7), 2012, 658. A RF MEMS capacitor with an interwoven structure is designed, fabricated in the PolyMUMPS process and tested in an effort to address fabrication challenges usually faced in MEMS processes. The interwoven structure was found to offer several advantages over the typical MEMS parallel-plate design including eliminating the warping caused by residual stress, eliminating the need for etching holes, suppressing stiction, reducing parasitics and providing

Numerical Methods for PDEs (NumPDE)

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