Skip to main content
Numerical Methods for PDEs
Numerical Methods for PDEs
Main navigation
Home
People
All Profiles
Principal Investigators
Postdoctoral Fellows
Students
Former Members
Events
All Events
Events Calendar
News
About
Activities
Slides
NumPDE Workshop 2025
CAMWA 50
POEMS 2026
memristor crossbar array
Compensated readout for high-density MOS-gated memristor crossbar array
1 min read ·
Sun, Apr 26 2015
News
Circuits
memristor crossbar array
Mohamed Zidan, et al., "Compensated readout for high-density MOS-gated memristor crossbar array." IEEE Transactions on Nanotechnology 14 (1), 2014, 3. Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor